About this courseSkip About this course
This course is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. Topics include device metrics for digital and analog circuits, traditional MOSFET theory, the virtual source model, 1D and 2D electrostatics, Landauer/transmission approach to nanotransistors, the limits of MOSFETs, as well as a quick look at HEMTs, bipolar transistors, and compact circuit models. The course should be useful for advanced undergraduates, beginning graduate students, as well as practicing engineers and scientists.
This course is part of a Purdue initiative that aims to complement the expertise that students develop with the breadth at the edges needed to work effectively in today's multidisciplinary environment. These serious short courses require few prerequisites and provide a general framework that can be filled in with self-study when needed.
Students taking this course will be required to complete two (2) proctored exams using the edX online Proctortrack software.
Completed exams will be scanned and sent using Gradescope for grading by Professor Lundstrom.
During the proctored exams, this course will follow the Purdue University ECE policy, the calculator must be a Texas Instruments TI-30X IIS scientific calculator. ONLY the Texas Instruments TI-30X IIS scientific calculator will be allowed.
What you'll learnSkip What you'll learn
- • MOSFET IV characteristics and device metrics and how to analyze measured transistor characteristics and extract key device parameters.
• The physical operation of transistors and the traditional theory of the MOSFET.
• 1D/2D/3D MOS electrostatics and the need for advanced MOSFET structures such as the FinFET.
• How modern transport theory (the transmission approach) is applied to nanoscale MOSFETs.
• How other transistors, such as HEMTs and bipolar transistors, operate.
• What a physics-based compact model is and the role they play in electronic design.
L1.1: The MOSFET as a black box
L1.2: Digital circuits
L1.3: Analog/RF circuits
L1.4: MOSFET device metrics
L1.5: Compact models
L1.6: Unit 1 Recap
Unit 2: Essential Physics of the MOSFET
L2.1: Energy Band Diagram Review
L2.2: Energy Band View of MOSFETs
L2.3: MOSFET IV Theory
L2.4: The Square Law MOSFET
L2.5: The Virtual Source model
L2.6: Unit 2 Recap
Unit 3: MOS Electrostatics
L3.1: The Energy Band Diagram Approach
L3.2: The Depletion Approximation
L3.3: Gate Voltage and Surface Potential
L3.4 Flat-band Voltage
L3.5: MOS CV
L3.6: The Mobile Charge vs. Surface Potential
L3.7: The Mobile Charge vs. Gate Voltage
L3.8: 2D MOS Electrostatics
L3.9: The VS model revisited
L3.10: Unit 3 Recap
Unit 4: Transmission theory of the MOSFET
L4.1: Landauer Approach
L4.2: Landauer at Low and High Bias
L4.3 The Ballistic MOSFET
L4.4 Velocity at the Virtual Source
L4.5: Transmission Theory of the MOSFET
L4.6: The VS model Revisited
L4.7: Analysis of Experiments
L4.8: Unit 4 Recap
Unit 5: Additional Topics
L5.1: Limits of MOSFETs
L5.2: Power MOSFETs
L5.3: High Electron Mobility Transistors (HEMTs)
L5.4: Review of PN Junctions
L5.5: Heterostructure Bipolar Transistors (HBTs)
L5.6: A Second Look at Compact models
L5.7: Unit 5 RecapL5.5: Compact models – another look
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