• Duración:
    5 semanas
  • Dedicación:
    8–12 horas por semana
  • Precio:

    GRATIS
    Agregar un Certificado Verificado por $49 USD

  • Institución
  • Tema:
  • Nivel:
    Advanced
  • Idioma:
    English
  • Transcripción de video:
    English
  • Tipo de curso:
    Al ritmo del instructor

Prerrequisitos

  • Physics, calculus, and chemistry at the first year university level
  • Familiarity with materials structure and bonding
  • A background in solid state physics is helpful, but is not absolutely essential

Sobre este curso

Omitir Sobre este curso

In this engineering course, you will learn about diodes, bipolar junction transistors, MOSFETs and semiconductor properties.

This course is part 1 of a series that explain the basis of the electrical, optical, and magnetic properties of materials including semiconductors, metals, organics, and insulators. You will learn how devices are built to take advantage of these properties. This is illustrated with a wide range of devices, placing a strong emphasis on new and emerging technologies.

Part 2 - 3.15.2x: Optical Materials and Devices
Part 3 - 3.15.3x: Magnetic Materials and Devices

Lo que aprenderás

Omitir Lo que aprenderás
  • The origins of semiconductor properties
  • Carrier action in semiconductors: drift, diffusion, recombination and generation
  • The behavior of p-n junctions at equilibrium and under bias
  • The derivation and application of the ideal diode equation, and how real diodes differ from ideal diodes
  • Operating principles of bipolar junction transistors and MOSFETs

Plan de estudios

Omitir Plan de estudios

Week 1:

  • Semiconductor Fundamentals

Week 2:

  • Carrier Action: Drift and Diffusion
  • Carrier Action: Recombination and Generation

Week 3:

  • pn Junction at Equilibrium
  • pn Junction Under Bias
  • The Ideal Diode Equation and Real Diodes

Week 4:

  • Bipolar Junction Transistor
  • Field Effect Transistors

Week 5:

  • Final Quiz

Conoce a tus instructores

Caroline Ross
Toyota Professor of Materials Science and Engineering
MIT

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