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Basics of Field Effect Transistors and Technology Scaling

This course uses engaging animations to help you visualize the working principles of many common semiconductor devices. The course covers MOS capacitors, charge coupled devices, classical MOSFETs, transistor scaling, short channel MOSFET, and nano-CMOS transistors.

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Comienza el 2 dic
Termina el 20 dic
Comienza el 6 dic

Basics of Field Effect Transistors and Technology Scaling

This course uses engaging animations to help you visualize the working principles of many common semiconductor devices. The course covers MOS capacitors, charge coupled devices, classical MOSFETs, transistor scaling, short channel MOSFET, and nano-CMOS transistors.

7 semanas
4–5 horas por semana
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Elige tu sesión:

Una vez finalizada la sesión del curso, será archivadoAbre en una pestaña nueva.
Comienza el 2 dic
Termina el 20 dic
Comienza el 6 dic

Sobre este curso

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This course is part of the Principle of Semiconductor Devices Professional Certificate Program.

As a topic of study, semiconductor devices offer a unique challenge due to the complex mathematics involved. In this course, we take a more intuitive approach to exploring the underlying concepts. We shift the focus from quantitatively evaluating the behavior of semiconductor devices to intuitively visualizing the semiconductor device actions.

Following the approach from Course 1 in the program, we expand the understanding from PN junction diodes and BJTs to MOS capacitors, charge coupled devices and MOSFETs. In addition to describing the theory of MOSFETs, the course covers some more recent development in non-traditional nano-CMOS transistors. Besides covering the existing technologies, the course will also enable you to project the development of the industry in the near future.

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  • Idioma: English
  • Transcripciones de video: English, 中文

Lo que aprenderás

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  • visualize the charge and capacitance characteristics of MOS capacitors
  • describe the operation principle of charge couple devices and CMOS active-pixel sensor to construct a digital camera
  • calculate the current voltage characteristics of MOSFETs
  • explain how the reduction of transistor dimensions and device scaling drive the technology development
  • identify the most important parameters to control short channel effects
  • construct short channel MOSFETs
  • communication in the language of nano-CMOS technology

Plan de estudios

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Week 1: MOS capacitor charges and capacitances
Introduction to the MOS capacitor structures, its charge and capacitance characteristics

Week 2: Charge coupled device, CMOS active-pixel sensor and MOS capacitor with a source
The operation principle of charge coupled devices, CMOS active pixel sensor for digital camera applications. The effect of adding a source to the MOS capacitor.

Week 3: Classical MOSFET I-V characteristics
Derivation of the classical MOSFET equations and the subthreshold characteristics.

Week 4: Mobility degradation and carrier velocity saturation
Correction to the classical pinchoff model by including the effect of mobility degradation and carrier velocity saturation.

Week 5: CMOS device scaling and short channel MOSFET
The effect of transistor scaling, short channel effects and the problems of small transistor design.

Week 6: Non-traditional nano-CMOS transistors
Introduction to the state-of-the-art transistors structure including SOI technology, FinFET, multi-gate MOSFET, tunnelling transistor and transistors based on 2-D materials.

Week 7: Final Exam

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